First-Principles Calculations of Pressure-Tunable Electronic Properties of Monolayer and Bilayer MoX2 (X = Te, Se)
Author:
Affiliation:
1. Bangladesh University of Engineering and Technology,Department of Electrical and Electronic Engineering,Dhaka,Bangladesh,1205
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10150428/10150460/10151343.pdf?arnumber=10151343
Reference17 articles.
1. Pressure and electric field-induced metallization in the phase-engineered ZrX2(X = S, Se, Te) bilayers
2. Electronic Band Tuning and Multivalley Raman Scattering in Monolayer Transition Metal Dichalcogenides at High Pressures
3. Effect of Vacancy on Electronic Properties of MX2 (M = Mo, W and X = S, Se) Monolayers
4. Advanced capabilities for materials modelling with Quantum ESPRESSO
5. Pressure-induced enhancement of thermoelectric performance in palladium sulfide
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