Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers
Author:
Affiliation:
1. Ruđer Bošković Institute,Zagreb,Croatia
2. MESA+ Institute of Nanotechnology, University of Twente,Enschede,The Netherlands
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10094038/10094053/10094164.pdf?arnumber=10094164
Reference16 articles.
1. Sheet resistance measurement for process monitoring of 400 °C PureB deposition on Si
2. Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes
3. Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment
4. Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents
5. Checks on temperature during on-wafer I-V characterization of Si diodes made with 2-D interfacial layers
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