Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment
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SPIE
Reference22 articles.
1. Conductance Along the Interface Formed by 400 °C Pure Boron Deposition on Silicon
2. Robust UV/VUV/EUV PureB Photodiode Detector Technology With High CMOS Compatibility
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1. Analytical Model of Dark Count Rate in Single-Photon Avalanche Diodes;IEEE Sensors Journal;2024-02-01
2. Identifying nano-Schottky diode currents in silicon diodes with 2D interfacial layers;2023 35th International Conference on Microelectronic Test Structure (ICMTS);2023-03-27
3. Low-Temperature Electrical Performance of PureB Photodiodes Revealing Al-Metallization-Related Degradation of Dark Currents;IEEE Transactions on Electron Devices;2021-06
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