MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design-Reference-Cited by-同舟云学术

MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

Published:2022-11 Issue:11 Volume:41 Page:4991-5004
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Wu Lizhou¹^ORCID,Rao Siddharth²,Taouil Mottaqiallah³^ORCID,Marinissen Erik Jan²^ORCID,Kar Gouri Sankar²,Hamdioui Said³^ORCID

Affiliation:

1. School of Computer, National University of Defense Technology, Changsha, China

2. Compute and Memory Department, IMEC, Leuven, Belgium

3. Computer Engineering Department, Delft University of Technology, Delft, The Netherlands

Funder

Natural Science Foundation of China

National Key Research and Development Program of China

Guangdong Major Project of Basic and Applied Basic Research

Natural Science Foundation of Guangdong Province

Key-Area Research and Development Program of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

Reference48 articles.

1. Dynamic compact model of spin-transfer torque based magnetic tunnel junction (MTJ);faber;Proc Int l Conf Systems Integration,2009

4. Asymmetry of MTJ switching and its implication to STT-RAM designs;zhang;Proc Design Autom Test Europe Conf,2012

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

2. Device-Aware Test for Back-Hopping Defects in STT-MRAMs;2023 Design, Automation & Test in Europe Conference & Exhibition (DATE);2023-04

3. Design of STT-MRAM Using Hybrid MTJ/CMOS for Applications beyond CMOS;2022 International Conference on Innovations in Science and Technology for Sustainable Development (ICISTSD);2022-08-25