Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions-Reference-Cited by-同舟云学术

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Temperature dependence of the voltage-controlled perpendicular anisotropy in nanoscale MgO|CoFeB|Ta magnetic tunnel junctions

Published:2014-03-17 Issue:11 Volume:104 Page:112410
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alzate Juan G.,Khalili Amiri Pedram,Yu Guoqiang,Upadhyaya Pramey,Katine Jordan A.,Langer Juergen,Ocker Berthold,Krivorotov Ilya N.,Wang Kang L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4869152

Reference30 articles.

1. The emergence of spin electronics in data storage

2. NONVOLATILE SPINTRONICS: PERSPECTIVES ON INSTANT-ON NONVOLATILE NANOELECTRONIC SYSTEMS

3. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

4. Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions

5. Low-power non-volatile spintronic memory: STT-RAM and beyond

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