Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16

Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16–300 K

Published:2010-12 Issue: Volume: Page:
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Marshall Cheryl J.,Marshall Paul W.,Ladbury Raymond L.,Waczynski Augustyn,Arora Rajan,Foltz Roger D.,Cressler John D.,Kahle Duncan M.,Chen Dakai,Delo Gregory S.,Dodds Nathaniel A.,Pellish Jonathan A.,Kan Emily,Boehm Nicholas,Reed Robert A.,LaBel Kenneth A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/5657993/05658023.pdf?arnumber=5658023

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of the Single-Event Latch-Up Cross section of a 16 nm FinFET System-on-Chip Using Backside Single-Photon Absorption Laser Testing and Correlation With Heavy Ion Data;IEEE Transactions on Nuclear Science;2024-08

2. Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing Applications;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Single-Event Latchup Vulnerability at the 7-nm FinFET Node;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

4. Neural-Network Decoders for Quantum Error Correction Using Surface Codes: A Space Exploration of the Hardware Cost-Performance Tradeoffs;IEEE Transactions on Quantum Engineering;2022

5. Design and Evaluation of Radiation-Hardened Standard Cell Flip-Flops;IEEE Transactions on Circuits and Systems I: Regular Papers;2021-11