Author:
Holmes-Siedle A.,Adams L.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
3 articles.
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1. The sensitivity of 100nm RADFETs with zero gate bias up to dose of 230Gy(Si);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12
2. Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation;Journal of Physics D: Applied Physics;2010-12-09
3. The dose mapping system for the electromagnetic calorimeter of the BaBar experiment at SLAC;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2001-01