The sensitivity of 100nm RADFETs with zero gate bias up to dose of 230Gy(Si)-Reference-Cited by-同舟云学术

The sensitivity of 100nm RADFETs with zero gate bias up to dose of 230Gy(Si)

Published:2011-12 Issue:23 Volume:269 Page:2703-2708
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ristić Goran S.,Vasović Nikola D.,Kovačević Milojko,Jakšić Aleksandar B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference35 articles.

4. Investigation of p-type MOS structure irradiated with 23MeV electrons;Kaschieva;Plasma Processes Polym.,2006

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