The sensitivity of 100nm RADFETs with zero gate bias up to dose of 230Gy(Si)

Author:

Ristić Goran S.,Vasović Nikola D.,Kovačević Milojko,Jakšić Aleksandar B.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference35 articles.

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3. Oxide and interface charges in ultrathin SiO2 thermally grown on RF plasma-hydrogenated silicon;Alexandrova;Vacuum,2004

4. Investigation of p-type MOS structure irradiated with 23MeV electrons;Kaschieva;Plasma Processes Polym.,2006

5. Influence of gamma and x radiation on gas-filled surge arrester characteristics;Lončar;IEEE Trans. Plasma Sci.,2006

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