Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET-Reference-Cited by-同舟云学术

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Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET

Published:2019-05 Issue:5 Volume:40 Page:698-701
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Ni Weijiang^ORCID,Wang Xiaoliang^ORCID,Xu Miaolin^ORCID,Wang Quan^ORCID,Feng Chun,Xiao Honglin,Jiang Lijuan,Li Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/8698471/08676293.pdf?arnumber=8676293

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC superjunction MOSFET with Schottky diode for improving short-circuit and reverse recovery ruggedness;Micro and Nanostructures;2024-07

2. SiC Trench MOSFET with Depletion-Mode pMOS for Enhanced Short-Circuit Capability and Switching Performance;Electronics;2023-11-24

3. The Influence of Special Environments on SiC MOSFETs;Materials;2023-09-13

4. Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

5. 1.2 kV 4H–SiC Super Junction UMOSFET with a Low-K dielectric pillar;Micro and Nanostructures;2023-04

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