A W-Band SPDT Switch With 15-dBm P1dB in 55-nm Bulk CMOS
Author:
Affiliation:
1. Faculty of Engineering and IT, School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia
2. School of Engineering and Technology, University of Hertfordshire, Hatfield, U.K.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9816061/09741853.pdf?arnumber=9741853
Reference16 articles.
1. A 130-to-180 GHz 0.0035 mm2 SPDT switch with 3.3 dB loss and 23.7 dB isolation in 65 nm bulk CMOS;meng;IEEE ISSCC Dig Tech Papers,2015
2. A Transformer-Based $V$ -Band SPDT Switch
3. A 60–110 GHz Transmission-Line Integrated SPDT Switch in 90 nm CMOS Technology
4. A Passive W-Band Imaging Receiver in 65-nm Bulk CMOS
5. A 90-GHz Asymmetrical Single-Pole Double-Throw Switch With >19.5-dBm 1-dB Compression Point in Transmission Mode Using 55-nm Bulk CMOS Technology
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1. W-Band Asymmetric CMOS Switch Using Inductive Matching Technique;IEEE Microwave and Wireless Technology Letters;2024-08
2. W-Band Compact Balun-Embedded SPDT Switch With Leakage-Canceled Overlapped Transformers;IEEE Microwave and Wireless Technology Letters;2023-11
3. Transistors for Solid-State Microwave Switches (A Review);Journal of the Russian Universities. Radioelectronics;2023-07-06
4. High isolation and high power of 0.13 µm CMOS SPDT switch using deep‐N‐well transistors and floating‐body technique in K‐band;Microwave and Optical Technology Letters;2023-03-16
5. A High-Isolation SPDT T/R switch in 0.18-μm CMOS for Wi-Fi 7 Applications;2022 IEEE 4th Eurasia Conference on IOT, Communication and Engineering (ECICE);2022-10-28
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