Cryogenic Characterization of the High Frequency and Noise Performance of SiGe HBTs From DC to 70 GHz and Down to 2 K-Reference-Cited by-同舟云学术

Cryogenic Characterization of the High Frequency and Noise Performance of SiGe HBTs From DC to 70 GHz and Down to 2 K

Published:2022-06 Issue:6 Volume:32 Page:696-699
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Bonen S.¹^ORCID,Cooke G.¹^ORCID,Jager T.¹^ORCID,Bharadwaj A.¹,Tripathi S. Pati¹^ORCID,Celi D.²,Chevalier P.²^ORCID,Schvan P.³,Voinigescu S. P.¹^ORCID

Affiliation:

1. ECE Department, University of Toronto, Toronto, ON, Canada

2. STMicroelectronics, Crolles, France

3. Analog Design Department, Ciena Corporation, Ottawa, ON, Canada

Funder

Ontario Centres of Excellence

Ciena Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9789421/09744598.pdf?arnumber=9744598

Reference14 articles.

1. A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT/370 GHz fMAX HBT and high-Q millimeter-wave passives;chevalier;IEDM Tech Dig,2014

2. A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design

3. Representation of Noise in Linear Twoports

4. Thermal Noise and Noise Measurements—A 2010 Update

5. An Investigation of Negative Differential Resistance and Novel Collector–Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures

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