A Physics-Based Analytical Formulation for the Tunneling Current Through the Base of Bipolar Transistors Operating at Cryogenic Temperatures
Author:
Affiliation:
1. Chair for Electron Devices and Integrated Circuits, TU Dresden, Dresden, Germany
Funder
German National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10004030/09994661.pdf?arnumber=9994661
Reference26 articles.
1. Experimental cryogenic modeling and noise of SiGe HBTs
2. Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration
3. Temperature Scalable Modeling of SiGe HBT DC Currents Down to 43K
4. Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing
5. Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
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