High Power 10–18 GHz Monolithic Limiter Based on GaAs p-i-n Technology-Reference-Cited by-同舟云学术

High Power 10–18 GHz Monolithic Limiter Based on GaAs p-i-n Technology

Author:

Li Shifeng¹^ORCID,Ma Lijun²,Wang Leiyang²,Lei Xiao²,Wu Bang²,Cheng Gary J.³^ORCID,Liu Feng⁴^ORCID

Affiliation:

1. Institute of Technological Sciences, Wuhan University, Wuhan, China

2. School of Power and Mechanical Engineering, Wuhan University, Wuhan, China

3. School of Industrial Engineering, Purdue University, West Lafayette, IN, USA

4. School of Power and Mechanical Engineering and the Institute of Technological Sciences, Wuhan University, Wuhan, China

Funder

Natural Science Foundation of Hubei Province of china

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

Reference14 articles.

1. Robust X-band GaN LNA with integrated active limiter;yagbasan;Proc 13th Eur Microw Integr Circuits Conf (EuMIC),2018

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