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A 230-GHz SiGe Amplifier With 21.8-dB Gain and 3-dBm Output Power for Sub-THz Receivers

  • Published:2021-08 Issue:8 Volume:31 Page:1004-1007
  • ISSN:1531-1309
  • Container-title:IEEE Microwave and Wireless Components Letters
  • language:
  • Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Li HuanboORCID,Chen JixinORCID,Hou DebinORCID,Li Zekun,Zhou PeigenORCID,Hong WeiORCID

Funder

National Natural Science Foundation of China

State Key Laboratory of Mobile Network and Mobile Multimedia Technology ZTE Corporation

Science and Technology on Monolithic Integrated Circuits and Modules Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Distributed Theory for Contactless Interconnects at Terahertz Frequencies;IEEE Microwave and Wireless Technology Letters;2024-08

2. High Frequency Devices for Next Generation High-Capacity and High Speed Communication Systems;The Journal of The Institute of Electrical Engineers of Japan;2024-06-01

3. A 27.1 dB Gain and 6.85 dB NF Low-Noise Amplifier Based on the Novel Gain-Noise Plane;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20

4. A 220-GHz Sliding-IF Quadrature Transmitter and Receiver Chipset for High Data Rate Communication in 0.13-µm SiGe BiCMOS;IEEE Journal of Solid-State Circuits;2023-07

5. A G-Band SiGe BiCMOS LNA With an On-Chip and Compact Temperature Compensation Biasing Circuit;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
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