Time Dependence of RF Losses in GaN-on-Si Substrates
Author:
Affiliation:
1. Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université catholique de Leuven, Leuven-la-Neuve, Belgium
2. IMEC, Leuven, Belgium
Funder
Fonds pour la Formation à la Recherche dans l’Industrie et dans l’Agriculture (FRIA), FNRS, Belgium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9789421/09754988.pdf?arnumber=9754988
Reference13 articles.
1. Small- and Large-Signal Performance Up To 175 °C of Low-Cost Porous Silicon Substrate for RF Applications
2. Modeling of Semiconductor Substrates for RF Applications: Part I—Static and Dynamic Physics of Carriers and Traps
3. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements
4. On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices
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