Dual-Band CMOS Low-Noise Amplifier Employing Transformer-Based Band-Switchable Load for 5G NR FR2 Applications
Author:
Affiliation:
1. Department of Radio and Information Communication Engineering, Chungnam National University, Daejeon, South Korea
Funder
Chungnam National University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10065598/09945636.pdf?arnumber=9945636
Reference21 articles.
1. A Wideband CMOS LNA Using Transformer-Based Input Matching and Pole-Tuning Technique
2. A 28 GHz and 38 GHz Dual-Band LNA Using Gain Peaking Technique for 5G Wireless Systems in 22 nm FD-SOI CMOS
3. Gm-boosted common-gate LNA and differential Colpitts VCO/QVCO in 0.18-?m CMOS;li;IEEE J Solid-State Circuits,2005
4. A $K\text{-}/Ka$ -Band Concurrent Dual-Band Single-Ended Input to Differential Output Low-Noise Amplifier Employing a Novel Transformer Feedback Dual-Band Load
5. A Low-Power, Linearized, Ultra-Wideband LNA Design Technique
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1. Dual-Band CMOS Down-Conversion Mixer Adopting Band-Switchable Transformer;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-10
2. High-Performance Broadband CMOS Low-Noise Amplifier with a Three-Winding Transformer for Broadband Matching;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11
3. A reconfigurable dual‐band low noise amplifier for 5G in 65‐nm CMOS;Electronics Letters;2023-05-31
4. Design of a Dual-Band LNA With Dual-Band Complex Load Impedance Transformer and Noise-Cancelling Technology;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14
5. Q-Band Wideband Low Noise Amplifier Using 65-nm Bulk CMOS Process;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-03
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