High-Performance Broadband CMOS Low-Noise Amplifier with a Three-Winding Transformer for Broadband Matching-Reference-Cited by-同舟云学术

High-Performance Broadband CMOS Low-Noise Amplifier with a Three-Winding Transformer for Broadband Matching

Published:2023-06-11 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Kim Joon-Hyung¹,Son Jeong-Taek¹,Lim Jung-Taek¹,Lee Jae-Eun¹,Song Jae-Hyeok¹,Baek Min-Seok¹,Choi Han-Woong¹,Lee Eun-Gyu¹,Choi Sunkyu¹,Lee Chong–Min²,Yeo Sung–Ku²,Kim Choul-Young¹

Affiliation:

1. Chungnam National University,SCD Lab,Republic of Korea

2. Smart Device Team, Samsung Research in Samsung Electronics,Republic of Korea

Funder

National Research Foundation of Korea(NRF)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10186107/10186112/10186167.pdf?arnumber=10186167

Reference13 articles.

1. A CMOS Band-Pass Low Noise Amplifier with Excellent Gain Flatness for mm-Wave 5G Communications

2. A 22.2-43 GHz Gate-Drain Mutually Induced Feedback Low Noise Amplifier in 28-nm CMOS

3. A 24-43 GHz LNA with 3.1-3.7 dB Noise Figure and Embedded 3-Pole Elliptic High-Pass Response for 5G Applications in 22 nm FDSOI

4. A 21–41-GHz Common-Gate LNA With TLT Matching Networks in 28-nm FDSOI CMOS

5. 6.7–15.3 GHz, High-Performance Broadband Low-Noise Amplifier With Large Transistor and Two-Stage Broadband Noise Matching

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1. A Compact 28/39 GHz Dual-Band Concurrent/Band-Switching LNA for 5G Multi-Band Multi-Stream Applications;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

2. Ultralow Noise Figure and Broadband CMOS LNA With Three-Winding Transformer and Large Transistor;IEEE Transactions on Microwave Theory and Techniques;2024-05