Highly Linear K-/Ka-Band SPDT Switch Based on Traveling-Wave Concept in a 150-nm GaN pHEMT Process-Reference-Cited by-同舟云学术

Highly Linear K-/Ka-Band SPDT Switch Based on Traveling-Wave Concept in a 150-nm GaN pHEMT Process

Author:

Kim Taehun¹^ORCID,Im Hyemin¹,Lee Suk-Hui²,Kim Ki-Jin³,Park Changkun¹^ORCID

Affiliation:

1. School of Electronic Engineering, College of Information Technology, Soongsil University, Seoul, Republic of Korea

2. Next-Generation Intelligence Semiconductor Foundation, Seongnam, Republic of Korea

3. Korea Electronics Technology Institute, Seongnam, Republic of Korea

Funder

Development of Civil Military Technology Project

Institute of Civil Military Technology Cooperation

National Research Foundation of Korea (NRF) through the Korea Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

Reference11 articles.

4. < 0.8 dB IL 46 dBm OIP$3~Ka$ band SPDT for 5G communication;li;Proc IEEE Meeting Silicon Monolithic Integr Circuits RF Syst (SiRF),2018

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