A 0.4-VIN, External-Capacitor-Free, Adaptive-Biased LDO with Look-Ahead Droop Reduction for Wake-up Features in Edge Devices
Author:
Affiliation:
1. Soongsil University,Department of Intelligent Semiconductors,Seoul,Korea
2. Soongsil University,School of Electronic Engineering,Seoul,Korea
Funder
National Research Foundation
Korea Institute for Advancement of Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10395912/10395932/10396075.pdf?arnumber=10396075
Reference6 articles.
1. 14.1 A 510nW 0.41V Low-Memory Low-Computation Keyword-Spotting Chip Using Serial FFT-Based MFCC and Binarized Depthwise Separable Convolutional Neural Network in 28nm CMOS
2. A 1.5μV end-to-end keyword spotting SoC with content-adaptive frame sub-sampling and fast-settling analog frontend;Seol;IEEE ISSCC,2023
3. A 13.5-nA Quiescent Current LDO With Adaptive Ultra-Low-Power Mode for Low-Power IoT Applications
4. A 10-mA LDO With 16-nA IQ and Operating From 800-mV Supply
5. An Output-Capacitor-Free Synthesizable Digital LDO Using CMP-Triggered Oscillator and Droop Detector
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