Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer-Reference-Cited by-同舟云学术

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Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

Published:2008-03 Issue:3 Volume:29 Page:265-268
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tsai Ping-Hung,Chang-Liao Kuei-Shu,Liu Chu-Yung,Wang Tien-Ko,Tzeng P. J.,Lin C. H.,Lee L. S.,Tsai M.-J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4455672/04455685.pdf?arnumber=4455685

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Reliability Impact of Bi Doping on the HfO2 Charge-Trapping Layer: A First-Principles Study;Journal of Electronic Materials;2024-04-18

2. Composition dependent charge retention in amorphous HfxAl1−xOy dielectric layers;Journal of Applied Physics;2023-04-26

3. Investigation of Heavy Ion Irradiation Effects on Charge Trapping Memory Capacitor by C-V Measurement;Chinese Physics B;2022-12-27

4. Synergic Impacts of CF₄ Plasma Treatment and Post-thermal Annealing on the Nonvolatile Memory Performance of Charge-Trap-Assisted Memory Thin-Film Transistors Using Al–HfO₂ Charge Trap and In–Ga–Zn–O Active Channel Layers;ACS Applied Electronic Materials;2022-03-07

5. MOx materials by ALD method;Metal Oxides for Non-volatile Memory;2022

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