Augmented Cell Performance of NO-Based Storage Dielectric by N<formula formulatype="inline"><tex>$_2$ </tex></formula>O-Treated Nitride Film for Trench DRAM-Reference-Cited by-同舟云学术

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Augmented Cell Performance of NO-Based Storage Dielectric by N$_2$ O-Treated Nitride Film for Trench DRAM

Published:2008-02 Issue:2 Volume:29 Page:149-151
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wu Yung-Hsien,Chang Chih-Ming,Wang Chun-Yao,Kao Chien-Kang,Kuo Chia-Ming,Ku Alex,Huang Tensor

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4435962/04435984.pdf?arnumber=4435984

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characteristics of Ge MOS device on Si substrate with thermal SiON as gate dielectric;Microelectronic Engineering;2010-11

2. Conductive Carbon as a Novel Front-End Electrode Material for a Trench DRAM;IEEE Electron Device Letters;2009-05

3. Applications;Silicon Devices and Process Integration

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