Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices-Reference-Cited by-同舟云学术

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Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices

Published:2007-05 Issue:5 Volume:28 Page:366-368
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin Chih-Yang,Wu Chen-Yu,Wu Chung-Yi,Lee Tzyh-Cheang,Yang Fu-Liang,Hu Chenming,Tseng Tseung-Yuen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4160006/04160030.pdf?arnumber=4160030

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