Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier-Reference-Cited by-同舟云学术

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Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier

Published:2020-08 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE/MTT-S International Microwave Symposium (IMS)
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Author:

Varonen Mikko,Sheikhipoor Nima,Gabritchidze Bekari,Cleary Kieran,Forsten Henrik,Rucker Holger,Kaynak Mehmet

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9212188/9223768/09223922.pdf?arnumber=9223922

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. W-Band Low-Noise-Amplifier MMICs in InGaAs HEMT Technologies on Gallium-Arsenide and Silicon Substrates;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A <5 dB NF, > 17 dBm OP_{1 dB} F-Band GaN-on-SiC HEMT LNA with a Monolithic Substrate-Integrated Waveguide Filter;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

3. Design of ultra-low noise amplifier for quantum applications (QLNA);Quantum Information Processing;2024-03-04

4. A Circuit Designer's Perspective on Transistor Modelling Challenges for 6G, Fiberoptics, and Quantum Computing ICs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

5. Design of a Low-Voltage LNA with Considering Reliability and Variability Issues;Journal of The Institution of Engineers (India): Series B;2022-12-29

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