Effect of Al-doping in $p$-type $\text{SnO}_{x}$ Thin Film Transistors: Physics and Modeling
Author:
Affiliation:
1. School of Electronics Engineering, Vellore Institute of Technology,Vellore,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9752769/9752688/09753322.pdf?arnumber=9753322
Reference37 articles.
1. Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications
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1. The Significance of an In Situ ALD Al2O3 Stacked Structure for p‐Type SnO TFT Performance and Monolithic All‐ALD‐Channel CMOS Inverter Applications;Advanced Electronic Materials;2023-03-10
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