Effect of Temperature on Dynamic Parameters of Junctionless Multiple Nanowire Field-Effect Transistors
Author:
Affiliation:
1. Centre for Applied Reseach in Electronics, Indian Institute of Technology,Delhi,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9752769/9752688/09752961.pdf?arnumber=9752961
Reference18 articles.
1. Gate-all-aroundjunctionless nanowire MOSFET with improved low-frequency noise behavior;singh;IEEE Electron Dev Lett,2011
2. Piezoresistive Sensing Performance of Junctionless Nanowire FET
3. Diameter-Dependent Piezoresistive Sensing Performance of Junctionless Gate-All-Around Nanowire FET
4. Cryogenic Operation of Junctionless Nanowire Transistors
5. Effect of the temperature on on Junctionless Nanowire Transistors electrical parameters down to 4K
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET;Microelectronics Journal;2024-04
2. Comprehensive Evaluation of Junctionless and Inversion-Mode Nanowire MOSFETs Performance at High Temperatures;IEEE Journal of the Electron Devices Society;2024
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