A 210 nW NPN-Based Temperature Sensor With an Inaccuracy of ±0.15 °C (3σ) From −15 °C to 85 °C Utilizing Dual-Mode Frontend
Author:
Affiliation:
1. Electronic Instrumentation Laboratory, Delft University of Technology, Delft, The Netherlands
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8011414/9677053/09953136.pdf?arnumber=9953136
Reference12 articles.
1. A 0.26-pJ·K2 2400-μm2 Digital Temperature Sensor in 55-nm CMOS
2. A 2.18-pJ/conversion, 1656-μm² Temperature Sensor With a 0.61-pJ·K² FoM and 52-pW Stand-By Power
3. Managing leakage in charge-based analog circuits with low-V/sub TH/ transistors by analog T-switch (AT-switch) and super cut-off CMOS
4. A 210 nW BJT-based temperature sensor with an inaccuracy of ±0.15°C (3?) from ?15°C to 85°C;someya;Symp VLSI Circuits Dig Tech Papers,2022
5. Nano-Watt Class Energy-Efficient Capacitive Sensor Interface With On-Chip Temperature Drift Compensation
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5. Optimization of a Nanoscale Operational Amplifier Based on a Complementary Carbon Nanotube Field-Effect Transistor by Adjusting Physical Parameters;IEEE Transactions on Nanotechnology;2024
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