Modeling and characterization of HBT limits
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9392908/9392902/09392953.pdf?arnumber=9392953
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Assessing DC and RF Reliability of SiGe HBTs Stress-Engineered Using Dummy BEOL Layers;IEEE Transactions on Electron Devices;2024
2. Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
3. The Effect of Collector Region Design on Large-Signal Performance of Horizontal Current Bipolar Transistor (HCBT);IEEE Transactions on Electron Devices;2023-07
4. The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applications;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
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