Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe-Reference-Cited by-同舟云学术

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Scalable High-Performance Phase-Change Memory Employing CVD GeBiTe

Published:2011-08 Issue:8 Volume:32 Page:1113-1115
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lee Jinil,Cho Sunglae,Ahn Dongho,Kang Mansug,Nam Seokwoo,Kang Ho-Kyu,Chung Chilhee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5961166/05936663.pdf?arnumber=5936663

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