Microstructural Investigation and Serial Section Tomography on ASIC Chips for Assurance Through Reverse Engineering Applications
Author:
Affiliation:
1. Computer Science and Engineering, Indian Institute of Technology Kharagpur,Kharagpur,India
Funder
Defence Research Development Organization (DRDO)
Department of Science and Technology (DST)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10317939/10317942/10318025.pdf?arnumber=10318025
Reference24 articles.
1. Top-down delayering by low energy, broad-beam, argon ion milling — a solution for microelectronic device process control and failure analyses
2. Invited Review: A review of the chemical reaction mechanism and kinetics for hydrofluoric acid etching of silicon dioxide for surface micromachining applications;monk;Thin Solid Films,1993
3. Methods for Delayering Integrated Circuits using a Broad Ion Mill
4. Selective wet etching of Si3N4/SiO2 in phosphoric acid with the addition of fluoride and silicic compounds;seo;Microelectronic Engineering,2014
5. Rapid integrated circuit delayering without grass
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