2D numerical investigation of the impact of compositional grading on the performance of submicrometer Si-SiGe MOSFET's-Reference-Cited by-同舟云学术

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2D numerical investigation of the impact of compositional grading on the performance of submicrometer Si-SiGe MOSFET's

Published:1995-06 Issue:6 Volume:42 Page:1039-1046
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Voinigescu S.P.,Rabkin P.B.,Salama C.A.T.,Blakey P.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/8777/00387235.pdf?arnumber=387235

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Oxide Engineering on Analog/RF Performance of Doping-Less DMDG MOSFET;Lecture Notes in Electrical Engineering;2019-12-04

2. MODELING OF NOISE BEHAVIOR OF GRADED BAND GAP CHANNEL MOSFET AT GHz FREQUENCIES;Fluctuation and Noise Letters;2007-12

3. A COMPARISON OF SILICON AND III–V TECHNOLOGY PERFORMANCE AND BUILDING BLOCK IMPLEMENTATIONS FOR 10 AND 40 Gb/s OPTICAL NETWORKING ICs;International Journal of High Speed Electronics and Systems;2003-03

4. Sub-micron strained Si:SiGe heterostructure MOSFETs;Microelectronics Journal;1997-08

5. A novel Si/sub 1-x/Ge/sub x//Si MOSFET;1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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