Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device-Reference-Cited by-同舟云学术

Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device

Published:2021-11-30 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE Physical Assurance and Inspection of Electronics (PAINE)
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Author:

Waite Adam R.¹,Patel Yash¹,Kelley John J.¹,Scholl Jonathan H.¹,Baur Joshua¹,Kimura Adam¹,Udelhoven Eric D.²,Via Glen David³,Ott Richard³,Brooks Daniel L.³

Affiliation:

1. Battelle Memorial Institute,Columbus,OH

2. KBR Dayton,OH

3. AFRL/RYDT, WPAFB,Air Force Research Labs,OH

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9707693/9707694/09707709.pdf?arnumber=9707709

Reference8 articles.

1. IC Decomposition and Imaging Metrics to Optimize Design File Recovery for Verification and Validation

2. Verification of Physical Chip Layouts Using GDSII Design Data

3. A Decomposition Workflow for Integrated Circuit Verification and Validation

4. Verification and Validation of a 45 nm Node Device Utilizing Homeomorphic Error Checking Concepts;waite;Government Microcircuit Applications and Critical Technology Conference 2020,2021

5. Noise2Void - Learning Denoising From Single Noisy Images

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