The Effect of Pore Defects on the Interfacial Thermal Resistance of GaN-Diamond Heterostructure-Reference-Cited by-同舟云学术

The Effect of Pore Defects on the Interfacial Thermal Resistance of GaN-Diamond Heterostructure

Published:2023-08-08 Issue: Volume: Page:1-5
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Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Yang Chao¹,Zhao Pengfei²,Wang Jian¹,Ma Dezhi¹,He Zhiyuan³,Fu Zhiwei⁴,Yang Jia-Yue⁵

Affiliation:

1. Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,School of Energy and Power Engineering,Jinan,China

2. Xi'an Jiaotong University,School of Microelectronics, Faculty of Electronic and Information Engineering,Xi'an,China

3. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,China

4. Shandong University Science and Technology on Reliability Physics and Application of Electronic Component Laboratory CEPREI,School of Energy and Power Engineering,Guangzhou,China

5. Shandong University Optics & Thermal Radiation Research Center, Institute of Frontier and Interdisciplinary Science, Shandong University,School of Energy and Power Engineering,Jinan,China

Funder

Shandong University

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492329.pdf?arnumber=10492329

Reference9 articles.

1. Diamond/GaN HEMTs: Where from and Where to?

2. Bonding‐Enhanced Interfacial Thermal Transport: Mechanisms, Materials, and Applications

3. Thermal Interface Resistance Measurements for GaN-on-Diamond Composite Substrates

4. Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers

5. Fast Parallel Algorithms for Short-Range Molecular Dynamics