Wafer-level Sn-Ag-Cu/SiO<sub>2</sub> Transient Liquid Phase Hybrid Bonding (TLP-HB) Technology-Reference-Cited by-同舟云学术

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Wafer-level Sn-Ag-Cu/SiO₂ Transient Liquid Phase Hybrid Bonding (TLP-HB) Technology

Published:2023-08-08 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
language:
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Author:

Zhang Shuai¹,Mao Hairong¹,Xu Hongbo¹,Zeng Lingfang¹,Chen Guang¹,Zeng Yuanpeng²

Affiliation:

1. Zhejiang Lab,ZJ Lab-Enflame Joint Innovation Research Center,Hangzhou,China

2. Zhejiang Lab,Research Center for Humanoid Sensing,Hangzhou,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492143.pdf?arnumber=10492143

Reference13 articles.

1. Low Temperature Copper-Copper Bonding of Non-Planarized Copper Pillar With Passivation

2. Low-Temperature Co-hydroxylated Cu/SiO2 Hybrid Bonding Strategy for a Memory-Centric Chip Architecture

3. Development of Copper/Dielectric Hybrid Fusion Bonding with Cavity for CMOS compatible Wafer Level Hermetic Packaging

4. Nanotwinned Copper Hybrid Bonding and Wafer-On-Wafer Integration

5. Wafer-level hybrid bonding for Cu/Interlayer-dielectric bonding

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