A Comprehensive Study of Interface Damage at Cu/Polyimide Interface in Redistribution Layers of Fan-out Wafer Level Packaging
Author:
Affiliation:
1. Chinese Academy of Sciences,Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced of Technology,Shenzhen,China,518055
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10491594/10491891/10491916.pdf?arnumber=10491916
Reference6 articles.
1. Development of advanced fan-out wafer level package[C];Jin
2. Fan-Out Wafer Level Packaging Development Line
3. Study on the board-level drop test of WLCSP with RDL by finite element analysis
4. A Comprehensive Study on Stress and Warpage by Design, Simulation and Fabrication of RDL-First Panel Level Fan-Out Technology for Advanced Package
5. A Fracture Mechanics Evaluation of the Cu-Polyimide Interface in Fan-Out Redistribution Interconnect
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