Near-infrared photoluminescence of high-resistivity epitaxial GaAs and InP and of epitaxial GaAs on Si-Reference-Cited by-同舟云学术

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Near-infrared photoluminescence of high-resistivity epitaxial GaAs and InP and of epitaxial GaAs on Si

Published:1989-05 Issue:5 Volume:25 Page:1025-1034
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Fouquet J.E.,Saxena R.R.,Patterson G.A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx1/3/1152/00027996.pdf?arnumber=27996

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoepitaxy of InAs on Geometric Patterned Si (001);ECS Journal of Solid State Science and Technology;2012

2. Localized and Delocalized States at the Band Gap in Heteroepitaxial GaAs Grown on Si;Chinese Physics Letters;1999-02-01

3. Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si;Journal of Applied Physics;1996-05-01

4. Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition;Journal of Materials Science Letters;1996

5. The near infrared photoluminescence of epitaxial Ga0.5In0.5P;Journal of Luminescence;1995-01

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