Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si-Reference-Cited by-同舟云学术

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Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si

Published:1996-05-01 Issue:9 Volume:79 Page:7173-7176
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:

Author:

Liang Jiachang¹,Jiang Junhua²,Zhao Jialong³,Gao Ying³

Affiliation:

1. Department of Basic Sciences, Civil Aviation Institute of China, Tianjin 300300, People's Republic of China

2. Department of Basic Sciences, Tianjin University of Light Industry, Tianjin 300222, People's Republic of China

3. Laboratory of Excited State Processes, Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021, People's Republic of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference25 articles.

1. R. M. Lum, J. K. Klingert, B. A. Davidson, and M. G. Lamont, Appl. Phys. Lett. 51, 36 (1987).APPLAB0003-6951

2. Y. Huang, P. Y. Yu, M. N. Charasse, Y. Lo, and S. Wang, Appl. Phys. Lett. 51, 192 (1987).APPLAB0003-6951

3. J. E. Fouquet, R. R. Saxena, and G. A. Patterson, IEEE J. Quantum Electron QE-25, 1025 (1989).IJQCB20020-7608

4. A. Mlayah, R. Carles, G. Landa, E. Bedel, C. Fontaine, and A. Munoz-Yague, J. Appl. Phys. 68, 4777 (1990).JAPIAU0021-8979

5. C. P. Kuo, S. K. Vong, R. M. Cohen, and G. B. Stringfellow, J. Appl. Phys. 57, 5428 (1985).JAPIAU0021-8979

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