8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices-Reference-Cited by-同舟云学术

8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices

Published:2023-01 Issue:1 Volume:58 Page:303-315
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Hung Je-Min¹,Wen Tai-Hao¹,Huang Yen-Hsiang¹,Huang Sheng-Po¹,Chang Fu-Chun¹,Su Chin-I²,Khwa Win-San²,Lo Chung-Chuan¹,Liu Ren-Shuo¹,Hsieh Chih-Cheng¹^ORCID,Tang Kea-Tiong¹^ORCID,Chih Yu-Der²,Chang Tsung-Yung Jonathan²,Chang Meng-Fan¹^ORCID

Affiliation:

1. Department of Electrical Engineering, National Tsing Hua University (NTHU), Hsinchu, Taiwan

2. Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan

Funder

Taiwan Semiconductor Manufacturing Company (TSMC) through the Joint Developed Project

Taiwan Semiconductor Research Institute

Ministry of Science and Technology (MOST) of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9999561/09874915.pdf?arnumber=9874915

Reference37 articles.

1. Equivalent-accuracy accelerated neural-network training using analogue memory

2. 33.2 a fully integrated analog ReRAM based 78.4 TOPS/W compute-in-memory chip with fully parallel MAC computing;liu;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2020

3. Fully memristive neural networks for pattern classification with unsupervised learning

4. 24.1 A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors

5. A 351 TOPS/W and 372.4 GOPS compute-in-memory SRAM macro in 7 nm FinFET CMOS for machine-learning applications;dong;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2020

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