A Four-Channel Bidirectional D-Band Phased-Array Transceiver for 200 Gb/s 6G Wireless Communications in a 130-nm BiCMOS Technology
Author:
Affiliation:
1. Department of Circuit Design, IHP–Leibniz-Institut für innovative Mikroelektronik, Frankfurt, Germany
2. Keysight Technologies, Bóblingen, Germany
3. Institute of Electronic Devices and Circuits, Ulm University, Ulm, Germany
Funder
Federal Ministry of Education and Research of Germany through the Program of “Souverän. Digital. Vernetzt.” Joint Project 6G-RIC
German Federal Ministry of Education and Research within the Research Project ForMikro-6GKom
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/4/10107667/10005812.pdf?arnumber=10005812
Reference24 articles.
1. A Broadband 110–170-GHz Stagger-Tuned Power Amplifier With 13.5-dBm P sat in 130-nm SiGe
2. A Low-Power SiGe BiCMOS 190-GHz Transceiver Chipset With Demonstrated Data Rates up to 50 Gbit/s Using On-Chip Antennas
3. Low Insertion Loss D-band SPDT Switches Using Reverse and Forward Saturated SiGe HBTs
4. 245 GHz SiGe sensor system for gas spectroscopy
5. Broadband 110 - 170 GHz True Time Delay Circuit in a 130-nm SiGe BiCMOS Technology
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