Low Insertion Loss D-band SPDT Switches Using Reverse and Forward Saturated SiGe HBTs-Reference-Cited by-同舟云学术

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Low Insertion Loss D-band SPDT Switches Using Reverse and Forward Saturated SiGe HBTs

Published:2019-01 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE Radio and Wireless Symposium (RWS)
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Author:

Karakuzulu Alper,Malignaggi Andrea,Kissinger Dietmar

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8706878/8714193/08714362.pdf?arnumber=8714362

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Built-In Self-Test of Millimeter-Wave Integrated Front-End Circuits: How Far Have We Come?;IEEE Access;2024

2. W-Band Compact Balun-Embedded SPDT Switch With Leakage-Canceled Overlapped Transformers;IEEE Microwave and Wireless Technology Letters;2023-11

3. A Four-Channel Bidirectional D-Band Phased-Array Transceiver for 200 Gb/s 6G Wireless Communications in a 130-nm BiCMOS Technology;IEEE Journal of Solid-State Circuits;2023-05

4. Low Insertion Loss, Reflective-Load Switches Operating in D-Band and G-Band;IEEE Transactions on Microwave Theory and Techniques;2023-01

5. Digital twin and its applications: A survey;The International Journal of Advanced Manufacturing Technology;2022-11-18

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