A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme-Reference-Cited by-同舟云学术

A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

Published:2021-01 Issue:1 Volume:56 Page:199-211
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Chun Ki Chul^ORCID,Kim Yong Ki^ORCID,Ryu Yesin,Park Jaewon,Oh Chi Sung^ORCID,Byun Young Yong,Kim So Young,Shin Dong Hak,Lee Jun Gyu,Ho Byung-Kyu,Park Min-Sang,Cho Seong-Jin,Woo Seunghan,Moon Byoung Mo,Kil Beomyong,Ahn Sungoh,Lee Jae Hoon,Kim Soo Young,Choi Seouk-Kyu,Jeong Jae-Seung,Ahn Sung-Gi,Kim Jihye,Kong Jun Jin,Sohn Kyomin^ORCID,Kim Nam Sung,Lee Jung-Bae

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9306027/09240974.pdf?arnumber=9240974

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