Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure-Reference-Cited by-同舟云学术

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Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure

Published:1988-11 Issue:11 Volume:35 Page:1986-1989
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Unagami T.,Kogure O.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/386/00007414.pdf?arnumber=7414

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Durability of Low-Temperature Deuterium Annealing Against Ionizing Radiation in MOSFETs;IEEE Transactions on Electron Devices;2024-09

2. Effects of a capping oxide layer on polycrystalline-silicon thin-film transistors fabricated by continuous-wave laser crystallization;Japanese Journal of Applied Physics;2018-05-23

3. Effects of crystallization mechanism on the electrical characteristics of green continuous-wave-laser-crystallized polycrystalline silicon thin film transistors;Applied Physics Letters;2013-07-29

4. Performance improvement with a combined scheme of rapid thermal annealing and multi-channel structure for poly-Si TFTs with various device dimensions;Journal of the Korean Physical Society;2012-10

5. A scheme for spin transistor with extremely large on/off current ratio;Journal of Applied Physics;2008-12-15

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