Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs
Author:
Affiliation:
1. Department of Information Engineering, University of Padova, Padua, Italy
2. Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA
3. Department of Physics and Astronomy, University of Padova, Padua, Italy
Funder
U.S. Air Force Center of Excellence in Radiation Effects
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/10221199/10017248.pdf?arnumber=10017248
Reference38 articles.
1. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
2. Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
3. TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
4. Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors
5. Radiation Effects in AlGaN/GaN HEMTs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultrahigh Doses;IEEE Transactions on Nuclear Science;2024-04
2. Defect and Impurity-Center Activation and Passivation in Irradiated AlGaN/GaN HEMTs;IEEE Transactions on Nuclear Science;2024-01
3. Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation;Applied Physics Letters;2023-04-24
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3