Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices-Reference-Cited by-同舟云学术

Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices

Published:2023-04 Issue:4 Volume:70 Page:322-327
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Johnson Robert A.¹^ORCID,Witulski Arthur F.¹^ORCID,Sierawski Brian D.¹^ORCID,Ball Dennis R.¹,Galloway Kenneth F.¹^ORCID,Sternberg Andrew L.¹^ORCID,Reed Robert A.¹^ORCID,Schrimpf Ronald D.¹^ORCID,Alles Michael L.¹,Lauenstein Jean-Marie²^ORCID,Hutson John M.³

Affiliation:

1. Electrical Engineering and Computer Science Department and the Institute for Space and Defense Electronics, Vanderbilt University, Nashville, TN, USA

2. NASA/GSFC, Greenbelt, MD, USA

3. Department of Electrical and Computer Engineering, Lipscomb University, Nashville, TN, USA

Funder

Early Stage Innovations grant from NASA's Space Technology Research Grants Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10103954/10080984.pdf?arnumber=10080984

Reference20 articles.

1. Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices

2. Analyzing system on a chip single event upset responses using single event upset data, classical reliability models, and space environment data;berg;Proc Government Microcircuit Appl Critical Technol Conf (GOMAC),2017

3. Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

4. Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs

5. CREME96: A Revision of the Cosmic Ray Effects on Micro-Electronics Code

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