Total Ionizing Dose Effects on the Power-Up State of Static Random-Access Memory-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Total Ionizing Dose Effects on the Power-Up State of Static Random-Access Memory

Published:2023-04 Issue:4 Volume:70 Page:641-647
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Surendranathan Umeshwarnath¹^ORCID,Wilson Horace¹,Wasiolek Maryla²^ORCID,Hattar Khalid³^ORCID,Milenkovic Aleksandar¹^ORCID,Ray Biswajit¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, AL, USA

2. Sandia National Laboratories, Albuquerque, NM, USA

3. Department of Nuclear Engineering, University of Tennessee-Knoxville, Knoxville, TN, USA

Funder

U.S. Department of Energy

Office of Nuclear Energy under DOE Idaho Operations Office

Nuclear Science User Facilities experiment

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

https://ieeexplore.ieee.org/ielam/23/10103954/10016659-aam.pdf

Reference27 articles.

1. Understanding radiation effects in SRAM-based field programmable gate arrays for implementing instrumentation and control systems of nuclear power plants

2. The Impact of Total Ionizing Dose on Unhardened SRAM Cell Margins

3. Bulk and FDSOI SRAM resiliency to radiation effects

4. A Novel SRAM PUF Stability Improvement Method Using Ionization Irradiation

5. Reliability Improvement on SRAM Physical Unclonable Function (PUF) Using an 8T Cell in 28nm FDSOI

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions;Applied Physics Letters;2024-06-24

2. Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells;IEEE Transactions on Nuclear Science;2024-03

3. Improving Radiation Reliability of SRAM-Based Physical Unclonable Function With Self-Healing and Pre-Irradiation Masking Techniques;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-02

4. Technology scaling effects on SRAM-PUF reliability under ionizing radiation;2023 Device Research Conference (DRC);2023-06-25

5. Analysis of SRAM PUF integrity under ionizing radiation: Effects of stored data and technology node;IEEE Transactions on Nuclear Science;2023

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3