Multiphoton Absorption in Gallium Nitride and Silicon Carbide Photodiodes: Applications for Single-Event Effects Tests
Author:
Affiliation:
1. Laboratoire de Physique et Chimie des Nano-Objets, Institut National des Sciences Appliquées de Toulouse, UMR 5215 CNRS-INSA-UPS, Toulouse, France
2. TRAD Tests and Radiations, Labège Cedex, France
Funder
Région Occitanie within the Feder Project “FemtoGaN”
TRAD Tests and Radiations, Labège Cedex, France
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
http://xplorestaging.ieee.org/ielx7/23/10186064/10129133.pdf?arnumber=10129133
Reference34 articles.
1. Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths
2. Intrinsic shape of free carrier absorption spectra in 4H-SiC
3. Mapping the Spatial Dependence of Charge-Collection Efficiency in Semiconductor Devices Using Pulsed-Laser Testing
4. Refractive Index, Dispersion, and Birefringence of Silicon Carbide Polytypes
5. Nonlinear optical properties of 6H-SiC and 4H-SiC in an extensive spectral range
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1. Probing Silicon Carbide with Phase-Modulated Femtosecond Laser Pulses: Insights into Multiphoton Photocurrent;ACS Photonics;2024-04-05
2. Effects of impurity band on multiphoton photocurrent in GaN and InGaN photodetectors;Optical Materials;2024-03
3. Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC;Applied Physics Letters;2024-02-05
4. Investigation of multiphoton photocurrent in SiC using phase-modulated femtosecond laser pulses;Quantum and Nonlinear Optics X;2023-11-26
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