Voltage Dependence of Single-Event Cross Sections of FinFET SRAMs for Low LET Condition-Reference-Cited by-同舟云学术

Voltage Dependence of Single-Event Cross Sections of FinFET SRAMs for Low LET Condition

Published:2023-08 Issue:8 Volume:70 Page:1755-1759
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Takeuchi K.¹^ORCID,Sakamoto K.¹^ORCID,Yukumatsu K.¹^ORCID,Kato T.²^ORCID,Matsuyama H.²,Takeyama A.³^ORCID,Makino T.³^ORCID,Ohshima T.³^ORCID,Shindo H.¹

Affiliation:

1. Japan Aerospace Exploration Agency, Tsukuba, Ibaraki, Japan

2. Socionext Inc., Kawasaki, Kanagawa, Japan

3. National Institutes for Quantum Science and Technology, Takasaki, Gunma, Japan

Funder

Japan Aerospace Exploration Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10221199/10182270.pdf?arnumber=10182270

Reference14 articles.

1. TCAD in Selete

2. Moore’s law continues into the 1x-nm era;james;Proc 27th Annu SEMI Adv Semiconductor Manuf Conf (ASMC),2016

3. Characteristic Charge Collection Mechanism Observed in FinFET SRAM Cells

4. Scaling trends and bias dependence of the soft error rate of 16 nm and 7 nm FinFET SRAMs

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