Mitigation of Single-Event Upset Sensitivity for 6T SRAM in a 0.18 μm DSOI technology Considering High LET Heavy Ions Irradiation-Reference-Cited by-同舟云学术

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Mitigation of Single-Event Upset Sensitivity for 6T SRAM in a 0.18 μm DSOI technology Considering High LET Heavy Ions Irradiation

Published:2023 Issue: Volume: Page:1-1
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Wang Yuchong¹^ORCID,Chen Siyuan¹^ORCID,Liu Fanyu¹^ORCID,Gao Jiantou¹^ORCID,Li Bo¹^ORCID,Li Binhong¹,Huang Yang¹^ORCID,Li Jiangjiang¹,Wang Chunlin¹,Wang Linfei¹,Cui Pengyu¹,Ma Shanshan¹,Liao Yiru¹,Chen Mengting¹,Wang Tianqi²^ORCID,Liu Jianli²,Huang Chuan³,Zhao Peixiong⁴^ORCID,Liu Jie⁴,Han Zhengsheng¹,Ye Tianchun¹^ORCID

Affiliation:

1. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China

2. Space Environment Simulation Research Infrastructure (SESRI), Harbin Institute of Technology, Harbin, China

3. School of Computer, National University of Defense Technology, Changsha, China

4. Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/4689328/10320403.pdf?arnumber=10320403

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