Study of Multicell Upsets in SRAM at a 5-nm Bulk FinFET Node
Author:
Affiliation:
1. Electrical and Computer Engineering Department, Vanderbilt University, Nashville, TN, USA
2. Synopsys Inc, Mountain View, CA, USA
3. Sandia National Laboratories, Albuquerque, NM, USA
Funder
Soft Error Consortium
National Technology and Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International, Inc
U.S. Department of Energy’s National Nuclear Security Administration
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Link
https://ieeexplore.ieee.org/ielam/23/10103954/10027473-aam.pdf
Reference28 articles.
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2. Laser Verification of Charge Sharing in a 90 nm Bulk CMOS Process
3. Multi-cell soft errors at the 16-nm FinFET technology node;tam;Proc IEEE Int Rel Phys Symp,2015
4. Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing
5. IRT: A modeling system for single event upset analysis that captures charge sharing effects
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4. Evaluation of Single-Event Upset in FinFET Device;2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED);2023-05-24
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