A GaN-on-Si Gate Driver with 14.7X Reduction in Tailing Current Loss and 37.0% Reduction of Reverse Conduction Loss
Author:
Affiliation:
1. National Yang Ming Chiao Tung University
2. Realtek Semiconductor Corp
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10121189/10121178/10121225.pdf?arnumber=10121225
Reference8 articles.
1. A Pre-Charge Tracking Technique in the 40MHz Highspeed switching 48-to-5V GaN-based DC-DC Buck Converter for Reducing Large Self-commutation Loss and Achieving a High Efficiency of 95.4;yang;IEEE JSSC,2022
2. A Monolithic E-Mode GaN 15W 400V Offline SelfSupplied Hysteretic Buck Converter with 95.6 Efficiency;kaufmann;ISSCC Dig Tech Papers,2020
3. 25.2 A 10MHz 3-to-40V VIN tri-slope gate driving GaN DC-DC converter with 40.5dB ? Vspurious noise compression and 79.3 ringing suppression for automotive applications;ke;ISSCC Dig Tech Papers,2017
4. 33.1 A Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-compensated Fast Turn-on Technique for Improving Reliability
5. 15.8 A 4.5V/ns Active Slew-Rate-Controlling Gate Driver with Robust Discrete-Time Feedback Technique for 600V Superjunction MOSFETs
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