Bandgap reference with curvature corrected compensation using subthreshold MOSFETs-Reference-Cited by-同舟云学术

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Bandgap reference with curvature corrected compensation using subthreshold MOSFETs

Published:2009-05 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Symposium on Circuits and Systems
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Author:

Adl Ahmad-Hossein,El-Sankary Kamal,El-Masry Ezz

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5076158/5117665/05117880.pdf?arnumber=5117880

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A -80dB PSRR 1.166ppm/°C bandgap voltage reference with improved high-order temperature compensation;IEICE Electronics Express;2023-08-25

2. A Concurrent Multi-output Bandgap Circuit with Sub-1V and Plus-2V Reference, Minimum 5. 128 ppm/°C Temperature Coefficient in 0.18µm BCD Process;2023 5th International Conference on Electronics and Communication Technologies (ECT;2023-07-21

3. A high-order curvature compensation technique for bandgap voltage reference using subthreshold MOSFETs;International Journal of Electronics;2010-07

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